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* DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc * BD179 is complementary with BD180 . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
* Pulse Test: Pulse Width
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon NPN Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage* (IC = 1.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage* (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Characteristic Rating
x 300 As, Duty Cycle x 2.0%.
Characteristic
BD179-10 ALL
Symbol
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
JC
PD
IC
IB
- 65 to + 150
Value
4.16
Max
30 240
1.0
3.0
5.0
80
80
V(BR)CEO
VCE(sat)
VBE(on)
Symbol
ICBO
IEBO
hFE
fT
Watts mw/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
Min
3.0
63 15
80
--
--
--
--
3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS
BD179 BD179-10
CASE 77-08 TO-225AA TYPE
Max
160 --
1.3
0.8
1.0
0.1
--
--
Order this document by BD179/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD179 BD179-10
10 IC, COLLECTOR CURRENT (AMP) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 1.0 dc TJ = 150C SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.0 AMP) PULSE DUTY CYCLE < 10% 5.0 7.0 10 20 30 50 2.0 3.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 100 s 1.0 ms 5.0 ms
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions.
Figure 1. Active Region Safe Operating Area
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8
IC = 0.1 A
0.25 A
0.5 A
1.0 A
0.6 TJ = 25C 0.4
0.2
0
0.2
0.3
0.5
1.0
2.0
3.0
10 5.0 IB, BASE CURRENT (mA) 1.5
20
30
50
100
200
Figure 2. Collector Saturation Region
hFE, DC CURRENT GAIN (NORMALIZED) 1000 700 500 300 200 100 70 50 30 20 10 2.0 3.0 5.0 TJ = + 150C TJ = + 25C TJ = + 55C VCE = 2.0 V 1.2 VOLTAGE (VOLTS) TJ = 25C
0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 0 2.0 3.0 5.0
10
20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA)
10
20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.01 SINGLE PULSE
Figure 4. "On" Voltages
JC(t) = r(t) JC JC = 4.16C/W MAX JC = 3.5C/W TYP D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 1000
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms)
20
30
50
Figure 5. Thermal Response 2 Motorola Bipolar Power Transistor Device Data
BD179 BD179-10
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
BD179 BD179-10
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*BD179/D*
BD179/D


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